28FDS

Samsung today announced that it has started mass production of its first commercial embedded Magnetic Random Access Memory (eMRAM). Made using its 28FDS (28nm FD-SOI) process technology, the eMRAM module promises to offer higher performance and endurance when compared to eFlash. Furthermore it can be integrated into existing chips, according to the manufacturer. Magneto resistive RAM uses a resistance-based method that determines what data is stored in a cell, which in turn is based on reading the orientation of two ferromagnetic films separated by a thin barrier. Samsung calls this process Magnetic Tunnel Junction, or MTJ. MRAM is one of the highest-performing and most durable non-volatile memory technologies currently exists. Because its eMRAM does not require an erase cycle before writing data, it is 1,000...